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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C MMBT3906M TRANSISTOR WBFBP-03B (1.2x1.2x0.5) unit: mm TOP DESCRIPTION PNP Epitaxial Silicon Transistor FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT3904M) Ultra-Small Surface Mount Package Also Available in Lead Free Version B 1. BASE 2. EMITTER 3. COLLECTOR E C BACK E B APPLICATION General Purpose Amplifier,switching For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING:3N C 3N BE MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol VCBO VCEO VEBO IC PD RJA TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Power Dissipation Thermal Resistance, Junction to Ambient Operating Temperature Storage and Temperature Parameter Value -40 -40 -5 -200 150 833 150 -55-150 Units V V V mA mW /W TYP MAX UNIT V V V -0.05 -0.1 60 80 100 60 30 -0.25 -0.4 -0.65 250 -0.85 -0.95 V V V V MHz 300 A A ELECTRICAL CHARACTERISTICS (Ta=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IEBO hFE(1) hFE(2) DC current gain hFE(3) hFE(4) hFE(5) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT unless Test otherwise conditions specified) MIN -40 -40 -5 IC=-10A,IE=0 IC=-1mA,IB=0 IE=-10A,IC=0 VCE=-30V,VEB(off)=-3V VEB=-5V,IC=0 VCE=-1V,IC=-0.1mA VCE=-1V,IC=-1mA VCE=-1V,IC=-10mA VCE=-1V,IC=-50mA VCE=-1V,IC=-100mA IC=-10mA,IB=-1mA IC=-50mA,IB=-5mA IC=-10mA,IB=-1mA IC=-50mA,IB=-5mA VCE=-20V,IC=-10mA,f=100MHz ELECTRICAL CHARACTERISTICS (Ta=25 Parameter Collector output capacitance Input capacitance Noise figure Delay time Rise time Storage time Fall time Symbol Cobo Ciob NF td tr tS tf unless Test otherwise conditions specified) MIN TYP MAX 4.5 10 4 35 35 225 75 UNIT pF pF dB nS nS nS nS VCB=-5V,IE=0,f=1MHz VEB=-0.5V,IC=0,f=1MHz VCE=-5V,Ic=0.1mA,f=1KHz,RS=1K VCC=-3V, VBE(OFF)=0.5V,IC=-10mA , IB1=-1mA VCC=-3V, IC=-10mA,IB1= IB2=- 1mA Typical Characteristics MMBT3906M Sym bol A A1 b b1 b2 D E D2 E2 e L L1 L2 k z D im e n s io n s In M illim e t e r s M in . M ax. 0 .4 5 0 0 .5 5 0 0 .0 1 0 0 .0 9 0 0 .1 7 0 0 .2 7 0 0 .2 7 0 0 .3 7 0 0 .2 5 0 R E F . 1 .1 5 0 1 .2 5 0 1 .1 5 0 1 .2 5 0 0 .4 7 0 R E F . 0 .8 1 0 R E F . 0 .8 0 0 T Y P . 0 .2 8 0 R E F . 0 .2 3 0 R E F . 0 .1 5 0 R E F . 0 .3 0 0 R E F . 0 .0 9 0 R E F . D im e n s io n s In In c h e s M in . M ax. 0 .0 1 8 0 .0 2 2 0 .0 0 0 0 .0 0 4 0 .0 0 7 0 .0 1 1 0 .0 1 1 0 .0 1 5 0 .0 1 0 R E F . 0 .0 4 5 0 .0 4 9 0 .0 4 5 0 .0 4 9 0 .0 0 2 R E F . 0 .0 3 2 R E F . 0 .0 3 2 T Y P . 0 .0 1 1 R E F . 0 .0 0 9 R E F . 0 .0 0 6 R E F . 0 .0 1 2 R E F . 0 .0 0 4 R E F . |
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